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absolute maximum ratings parameter units i d @ v gs = 4.5v, t c = 25c continuous drain current 22* i d @ v gs = 4.5v, t c = 100c continuous drain current 22* i dm pulsed drain current ? 88 p d @ t c = 25c max. power dissipation 50 w linear derating factor 0.4 w/c v gs gate-to-source voltage 12 v e as single pulse avalanche energy ? 130 mj i ar avalanche current ? 22 a e ar repetitive avalanche energy ? 5.0 mj t j operating junction -55 to 150 t stg storage temperature range o c package mounting surface temperature 300 (for 5 s) weight 1.0 g seventh generation hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. these devices are well-suited for applications such as switching power supplies, motor controls, invert- ers, choppers, audio amplifiers and high-energy pulse circuits. a 08/13/03 www.irf.com 1 12v, n-channel smd-0.5 product summary part number bv dss r ds(on) i d IRL7NJ3802 12v 0.0085 22a* features: low r ds(on) avalanche energy ratings simple drive requirements ease of paralleling hermetically sealed surface mount light weight for footnotes refer to the last page * current is limited by package hexfet ? power mosfet surface mount (smd-0.5) IRL7NJ3802 pd - 94721
IRL7NJ3802 2 www.irf.com thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 2.5 c/w source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 22* i sm pulse source current (body diode) ? ?? 88 v sd diode forward voltage ? ? 1.2 v t j = 25c, i s = 22a, v gs = 0v t rr reverse recovery time ? ? 40 ns t j = 25c, i f = 22a, di/dt 100a/ s q rr reverse recovery charge ? ? 40 nc v dd 6.0v t on forward tu rn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available on international rectifier website. for footnotes refer to the last page electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 12 ? ? v v gs = 0v, i d = 250 a ? bv dss / ? t j temperature coefficient of breakdown ? 0.009 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.0085 ? v gs = 4.5v, i d = 22a resistance ? ? 0.03 v gs = 2.8v, i d = 22a v gs(th) gate threshold voltage 0.6 ? 1.9 v v ds = v gs , i d = 250 a g fs forward transconductance 42 ? ? s ( )v ds = 6.0v, i ds = 22a i dss zero gate voltage drain current ? ? 100 v ds = 9.6v ,v gs =0v ? ? 250 v ds = 9.6v, v gs = 0v, t j =125c i gss gate-to-source leakage forward ? ? 100 v gs = 12v i gss gate-to-source leakage reverse ? ? -100 v gs = -12v q g total gate charge ? ? 41 v gs =4.5v, i d = 22a q gs gate-to-source charge ? ? 12 nc v ds = 6.0v q gd gate-to-drain (?miller?) charge ? ? 10.5 t d (on) turn-on delay time ? ? 15 v dd = 6.0v, i d = 22a, t r rise time ? ? 115 v gs = 4.5v, r g = 6.0 ? t d (off) turn-off delay time ? ? 30 t f fall time ? ? 25 l s + l d total inductance ? 4.0 ? measured from the center of drain pad to center of source pad c iss input capacitance ? 2470 ? v gs = 0v, v ds = 6.0v c oss output capacitance ? 2130 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 500 ? na ? nh ns a * current is limited by package r g gate resistance ? 1.9 ? ? f = 1.33mhz, open drain
www.irf.com 3 IRL7NJ3802 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15

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i d , drain-to-source current ( ) " 0 * "$%& * "#$%& -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 4.5v 22a

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IRL7NJ3802 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage

$ $ # #$ ( ($ + +$ $ c, capacitance(pf) & & & ) ","- . & "& / & 0 & 0 12 & "& 0 & "& 0 /& 0 0 10 20 30 40 50 60 0 4 8 12 16 q , total gate char g e (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 22a v = 6v ds v = 9.6v ds # + 3 # +

i sd , reverse drain current ( ) ) " * "$%& t j = 25c

i d , drain-to-source current (a) "#$%& !"$%& 4 4 125166 525 -782 9
www.irf.com 5 IRL7NJ3802 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v gs 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. dut y factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectan g ular pulse duration ( sec ) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 10 20 30 40 50 60 70 t , case temperature ( c) i , drain current (a) c d limited by package
IRL7NJ3802 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 4.5v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v . v gs t p v (br)dss i as 25 50 75 100 125 150 0 50 100 150 200 250 300 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 10a 14a 22a
www.irf.com 7 IRL7NJ3802 footnotes: case outline and dimensions ? smd-0.5 pad assignments repetitive rating; pulse width limited by maximum junction temperature. pulse width 300 s; duty cycle 2% v dd = 25 v, starting t j = 25c, l=0.5mh peak i as = 22a, r g = 25 ? ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 08/03

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